PART |
Description |
Maker |
2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MA733TX MA367TX |
SILICON, UHF BAND, MIXER DIODE VHF-UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS) VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SC4245 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
|
TOSHIBA
|
2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) From old datasheet system RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
GLP16-400M |
UHF Band
|
Soshin
|
KDV239E |
VCO for UHF Band Radio VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|